Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...

At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...

During the keynote speech at the IEEE International Electron Devices Meeting (IEDM) held at the end of 2024, 2D Field Effect Transistors (2D FET) and carbon nanotubes were mentioned as potential ...

Since the discovery of graphene in 2004, research over the past two decades has advanced the use of 2D materials in ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Fibonacci levels suggested the next resistance level may be near $1.335, where sellers may test the rally Improving market health across the board could possibly facilitate an uptick for FET Fetch.AI ...

Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, ...

While conducting their study, they discovered that 2D materials can also be uniquely engineered to create an entirely new transistor architecture, which they dubbed nano-plate FET (NPFET). This ...

MOUNTAIN VIEW, Calif. and LEUVEN, Belgium, Dec. 16, 2014 -- Synopsys, Inc. (Nasdaq:SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic ...

With AI increasingly playing a role in trading decisions, one bot has made headlines after generating an impressive $80,000 from accurately predicting the SUI and FET rallies. Interestingly, this same ...