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Compoundsemiconductor.net
1d
Double heterostructure HEMTs for handsets
Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...
EDN
3d
Wolfspeed debuts Gen 4 MOSFET portfolio
Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...
Compoundsemiconductor.net
6d
UK team leads diamond-FET breakthrough
At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...
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