While LDMOS transistors aren’t exactly new – laterally-diffused MOSFETs have been appearing in RF power applications for decades – the particular parts used for the amp, NXP’s MRF300 power ...
RF switch delivers high performance down to zero Hertz making it ideal for complex space and defence applications.
Forty-five experts from industry and academia met in the magnificent city of Toledo for the second workshop on efficient RF ...
Teledyne HiRel Semiconductors announces the availability of its latest rad-tolerant wideband 50 GHz RF switch, model ...
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Advance paves way for new generation of diamond-based transistors in high-power electronicsA landmark development led by researchers from the University of Glasgow could help create a new generation of diamond-based ...
In CMOS transistor, the threshold is high and there exist a number ... the doubler as a function of the input power for different BG voltages. For the same RF input power, the output voltage obtained ...
At the University of Glasgow’s James Watt Nanofabrication Centre, the team used surface chemistry techniques to improve the ...
This improves the primary drive power for its size and eliminates that noisy spark gap. That’s one less source of broadband RF noise and ... ensuring the switching transistor and rectifying ...
Developed using a wide-bandgap GaN High Electron Mobility Transistor (HEMT) process ... tolerating up to 900mA/mm saturation currents and high voltage RF-power handling capabilities. The inherent high ...
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